Interconnect Lifetime Prediction for Temperature - Aware Design
نویسندگان
چکیده
Thermal effects are becoming a limiting factor in high-performance circuit design due to the strong temperature-dependence of leakage power, circuit performance, IC package cost and reliability. Temperature-aware design tries to maximize performance under a given thermal envelope through various static and dynamic approaches. While existing interconnect reliability models assume a constant temperature, this paper presents a technique for probabilistically estimating interconnect lifetime for any time-varying temperature profile. With this formulation, interconnect lifetime can be modeled as a resource that is consumed over time, with the rate of consumption being a function of temperature. As a result, designers may be more aggressive in the temperature profiles that are allowed on a chip instead of using static worst-case assumptions. For example, performance (hence power and temperature) may be increased beyond what is allowed by worst-case restrictions for short periods as long as the increase is compensated for later by lower activity. With this model, temperature-aware designs will achieve higher overall performance while satisfying lifetime requirements.This report is superseded by TR CS-2004-08.
منابع مشابه
Interconnect Lifetime Prediction with Temporal and Spatial Temperature Gradients for Reliability-Aware Design and Runtime Management: Modeling and Applications
Thermal effects are becoming a limiting factor in high performance circuit design due to the strong temperature dependence of leakage power, circuit performance, IC package cost and reliability. While many interconnect reliability models assume a constant temperature, this paper analyzes the effects of temporal and spatial thermal gradients on interconnect lifetime in terms of electromigration....
متن کاملTemperature-Aware Modeling and Banking of IC Lifetime Reliability
Most existing integrated circuit (IC) reliability models assume a uniform, typically worst-case, operating temperature, but temporal and spatial temperature variations affect expected device lifetime. As a result, design decisions and dynamic thermal management (DTM) techniques using worst-case models are pessimistic and result in excessive design margins and unnecessary runtime engagement of c...
متن کاملThe Importance of Temporal and Spatial Temperature Gradients in IC Reliability Analysis
Existing IC reliability models assume a uniform, typically worst-case, operating temperature, but temporal and spatial temperature variations affect expected device lifetime. This paper presents a model that accounts for temperature gradients, dramatically improving interconnect and gate-oxide lifetime prediction accuracy. By modeling expected lifetime as a resource that is consumed over time a...
متن کاملAnalysis of Temporal and Spatial Temperature Gradients for IC Reliability
One of the most common causes of IC failure is interconnect electromigration (EM), which exhibits a rate that is exponentially dependent on temperature. As a result, EM rate is one of the major determinants of the maximum tolerable operating temperature for an IC and of resulting cooling costs. Previous EM models have assumed a uniform, typically worst-case, temperature. This paper presents a m...
متن کاملBanking Chip Lifetime: Opportunities and Implementation
Most existing integrated circuit reliability models assume a uniform, typically worst-case, operating temperature, but temporal and spatial temperature variations affect expected device lifetime. As a result, design decisions and dynamic thermal management techniques using worst-case models are pessimistic and result in excessive design margins and unnecessary runtime engagement (and associated...
متن کامل